- 您现在的位置：买卖IC网 > Sheet目录415 > FDC6301N (Fairchild Semiconductor)IC FET DGTL N-CH DUAL 25V SSOT6
Electrical Characteristics (T A = 25 O C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV DSS
? BV DSS / ? T J
I DSS
I GSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
Gate - Body Leakage Current
V GS = 0 V, I D = 250 μA
I D = 250 μA, Referenced to 25 o C
V DS = 20 V, V GS = 0 V
T J = 55°C
V GS = 8 V, V DS = 0 V
25
25
1
10
100
V
mV / o C
μA
μA
nA
ON CHARACTERISTICS (Note 2)
? V GS(th) / ? T J
Gate Threshold Voltage Temp.Coefficient
I D = 250 μA, Referenced to 25 o C
-2.1
mV / o C
V GS(th)
R DS(ON)
Gate Threshold Voltage
Static Drain-Source On-Resistance
V DS = V GS , I D = 250 μA
V GS = 2.7 V, I D = 0.2 A
0.65
0.85
3.8
1.5
5
V
?
V GS = 4.5 V, I D = 0.4 A
T J =125°C
6.3
3.1
9
4
I D(ON)
g FS
On-State Drain Current
Forward Transconductance
V GS = 2.7 V, V DS = 5 V
V DS = 5 V, I D = 0.4 A
0.2
0.25
A
S
DYNAMIC CHARACTERISTICS
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 10 V, V GS = 0 V,
f = 1.0 MHz
9.5
6
1.3
pF
pF
pF
SWITCHING CHARACTERISTICS (Note 2)
t D(on)
t r
t D(off)
t f
Q g
Q gs
Q gd
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 6 V, I D = 0.5 A,
V GS = 4.5 V, R GEN = 50 ?
V DS = 5 V, I D = 0.2 A,
V GS = 4.5 V
5
4.5
4
3.2
0.49
0.22
0.07
10
10
8
7
0.7
ns
ns
ns
ns
nC
nC
nC
Inverter Electrical Characteristics (T A = 25°C unless otherwise noted)
I O (off)
V I (off)
V I (on)
Zero Input Voltage Output Current
Input Voltage
V CC = 20 V, V I = 0 V
V CC = 5 V, I O = 10 μA
V O = 0.3 V, I O = 0.005 A
1
1
0.5
μA
V
V
R O (on)
Output to Ground Resistance
V I = 2.7 V, I O = 0.2 A
3.8
5
?
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θ JC is guaranteed by
design while R θ CA is determined by the user's board design. R θ JA shown below for single device operation on FR-4 in still air.
a. 140 O C/W on a 0.125 in 2 pad of
2oz copper.
b. 180 O C/W on a 0.005 in 2 of pad
of 2oz copper.
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
FDC6301N Rev.D
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
FDC6302P
MOSFET P-CH DUAL 25V SSOT6
FDC6303N
IC FET DGTL N-CH DUAL 25V SSOT6
FDC6304P
MOSFET P-CH DUAL 25V SSOT-6
FDC6305N
MOSFET N-CHAN DUAL 20V SSOT6
FDC6306P
MOSFET P-CHAN DUAL 20V SSOT6
FDC6310P
MOSFET P-CH DUAL 20V SSOT-6
FDC6312P
MOSFET P-CH DUAL 20V SSOT-6
FDC6318P
MOSFET P-CH DUAL 12V SSOT-6
相关代理商/技术参数
FDC6301N
制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET NN CH 25V 0.22A SSOT6 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, NN CH, 25V, 0.22A, SSOT6 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, NN CH, 25V, 0.22A, SSOT6; Transistor Polarity:N Channel; Continuous Drain Current Id:220mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:850mV ;RoHS Compliant: Yes
FDC6301N
制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR 制造商:Fairchild Semiconductor Corporation 功能描述:DUAL N CH MOSFET, 25V, SUPER SOT-6
FDC6301N_01
制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel , Digital FET
FDC6301N_G
制造商:Fairchild Semiconductor Corporation 功能描述:TRANS MOSFET N-CH 25V 0.22A 6PIN SUPERSOT - Tape and Reel
FDC6301N_Q
功能描述:MOSFET SSOT-6 N-CH 25V
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6302P
功能描述:MOSFET SSOT-6 P-CH -25V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6302P
制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P CH DUAL 25V 0.12A SSOT6 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P CH DUAL 25V 0.12A SSOT6; Transistor Polarity:P Channel; Continuous Drain Current Id:-200mA; Drain Source Voltage Vds:-25V; On Resistance Rds(on):10ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1V ;RoHS Compliant: Yes
FDC6302P
制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR 制造商:Fairchild Semiconductor Corporation 功能描述:DUAL P MOSFET -25V -120mA SUPERSOT6